GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

Photonic crystal light-emitting diodes fabricated by microsphere lithography.

Instead of using conventional electron lithography, a two-dimensional photonic crystal consisting of a hexagonal array of triangular air-holes was created on the surface of a GaN LED substrate using microsphere lithography. The microspheres self-assemble into a single-layered hexagonal-close-packed array acting as an etch mask. A significant enhancement in photoluminescence intensity was record...

Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals.

Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mo...

DOCTEUR DE L'ECOLE POLYTECHNIQUE Aurélien DAVID High-efficiency GaN-based light-emitting diodes: Light extraction by photonic crystals and microcavities

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemica...

10 GaN - based Light - Emitting Diodes

Light-emitting diodes (LEDs) offer several advantages over traditional light sources, such as smaller size, longer lifetime, higher efficiency, and greater mechanical ruggedness. Continuing developments in LED technology are producing devices with increased output power and efficiency as well as a wider range of colors [1]. Recent progress in the fabrication of GaN-based compound semiconductors...